Single InGaAs quantum dot flash memory

被引：1

作者：

Schliemann, A ^{[1
]}

Worschech, L ^{[1
]}

Reitzenstein, S ^{[1
]}

Kaiser, S ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS | 2003年

关键词：

D O I：

10.1002/pssc.200303086

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Modulation doped GaAs/AlGaAs heterostructures have been grown by molecular beam epitaxy with a layer of self-assembled InGaAs quantum dots located in the center of the undoped AlGaAs spacer. Electron beam lithography and etching techniques were used to define 70 mn wide current channels in combination with lateral side gates. Depending on the direction of gate voltage sweeps the onset of conductance differs by up to 1.7 V, which is associated to charging and discharging of the quantum dots in the spacer. From Coulomb blockade oscillation single electron effects are revealed.

引用

页码：1343 / 1346

页数：4

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