High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing

被引：18

作者：

Lazar, M

Ottaviani, L

Locatelli, ML

Raynaud, C

Planson, D

Morvan, E

Godignon, P

Skorupa, W

Chantel, JP

机构：

[1] INSA Lyon, UMR CNRS 5005, CEGELY, FR-69621 Villeurbanne, France

[2] CSIC, Ctr Nacl Microelect, ES-08193 Bellaterra, Spain

[3] Forschungszentrum Rossendorf EV, DE-01314 Dresden, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

AFM; annealing; electrical activation; ion implantation; recrystallization; SIMS;

D O I：

10.4028/www.scientific.net/MSF.353-356.571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al and N implantations were carried out in 6H-SiC n-type epitaxial layers at room temperature. RBS/C analysis confirms the presence of an amorphous layer up to the surface in the as-implanted samples. The samples rf-annealed at 1700 degreesC during 30 mn with a preliminary 40 degreesC per second heating slope are recrystallised in RBS/C analysis terms. SIMS measurements show no dopant loosing after the annealing and dopant profile distributions are in agreement with CNM Monte-Carlo simulation. A good surface stoichiometry is revealed by XPS after annealing but AFM surface measurements reveal a relatively high rns roughness (14 nm) on annealed samples. High electrical activation of dopants was found, 19 k Omega/square sheet resistance: which corresponds to 50 % electrical dopant activation for Al implanted layer, and 6.7 k Omega/square sheet resistance and 100% electrical activation for N-implanted layer.

引用

页码：571 / 574

页数：4

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