Enhancement of Light Output Power and Modification of Beam Profile in InGaN/GaN Light Emitting Diodes with Micro Polygon Column Shaped Transparent

被引：0
作者：
Lee, Mi So [1 ]
Kim, Hyung Gu [1 ]
Kang, Ji Hye [1 ]
Ryu, Jae Hyoung [1 ]
Kim, Hyun Kyu [1 ]
Kim, Hee Yun [1 ]
Uthirakumar, Periyayya [1 ]
Hong, Chang Hee [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Chonju 561756, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 11期
关键词：
EPITAXIAL LATERAL OVERGROWTH; P-GAN; SURFACE; FABRICATION; MOCVD; LEDS; SI;
D O I：
10.1143/JJAP.49.112101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication of GaN-based light-emitting diodes (LEDs) with micro-polygon (MPC) obtained by selective area growth (SAG) using the technique of metal organic chemical vapor deposition (MOCVD). The SAG makes it possible to control the density size and position of the micro polygon columns. The facet structure consists of a polygon column covered with {1101} facets columns with rough occur on the (0001) surface. The light output power of the MPC-LED was 53% higher than conventional LED. In addition the light extraction efficiency of InGaN/GaN LEDS is significantly improved owing to the photon path length is shorter. It is possible to modify the beam profile via shaped transparent layer. Thus, this structure can provide photons with multiple chances of escaping from the LEDS surfaces. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes
    Zhao, Peng
    Han, Lu
    Zhao, Hongping
    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII, 2013, 8641
  • [2] Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening
    Yang, Yibin
    Ren, Yuan
    Chen, Yangxiang
    Liu, Minggang
    Chen, Weijie
    Han, Xiaobiao
    Lin, Xiuqi
    Liao, Qiang
    Zang, Wenjie
    Luo, Hui
    Lin, Jiali
    Wu, Zhisheng
    Liu, Yang
    Zhang, Baijun
    MICROELECTRONIC ENGINEERING, 2015, 139 : 39 - 42
  • [3] Optical and Electrical Properties of μ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
    Hsu, Che-Kang
    Sheu, Jinn-Kong
    Wang, Jia-Kuen
    Lee, Ming-Lun
    Chang, Kuo-Hua
    Tu, Shang-Ju
    Lai, Wei-Chih
    APPLIED PHYSICS EXPRESS, 2011, 4 (03)
  • [4] Improvement of Light Output Power in InGaN/GaN Light-Emitting Diodes with a Nanotextured GaN Surface Using Indium Tin Oxide Nanospheres
    Kang, Ji Hye
    Kim, Hyung Gu
    Kim, Hyun Kyu
    Kim, Hee Yun
    Ryu, Jae Hyoung
    Uthirakumar, Periyayya
    Han, Nam
    Hong, Chang-Hee
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (10) : 1021041 - 1021044
  • [5] Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer
    Kao, C. C.
    Su, Y. K.
    Lin, C. L.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (14) : 986 - 988
  • [6] Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling
    Hsu, Che-Kang
    Sheu, Jinn-Kong
    Wang, Jia-Kuen
    Lee, Ming-Lun
    Chang, Kuo-Hua
    Tu, Shang-Ju
    Lai, Wei-Chih
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (08) : H343 - H345
  • [7] Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer
    Jeong, Hwan Hee
    Lee, Sang Youl
    Jeong, Young Kyu
    Choi, Kwang Ki
    Song, June-O
    Lee, Yong-Hyun
    Seong, Tae-Yeon
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (07) : H237 - H239
  • [8] InGaN/GaN heterostructures with lateral confinement for light emitting diodes
    Kotlyar, K. P.
    Soshnikov, B. I.
    Morozov, I. A.
    Kudryashov, D. A.
    Zelentsov, K. S.
    Lysak, V. V.
    Soshnikov, I. P.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [9] Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
    Choi, Won Hyuck
    You, Guanjun
    Abraham, Michael
    Yu, Shih-Ying
    Liu, Jie
    Wang, Li
    Xu, Jian
    Mohney, Suzanne E.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (01)
  • [10] Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
    Ee, Yik-Khoon
    Kumnorkaew, Pisist
    Arif, Ronald A.
    Tong, Hua
    Gilchrist, James F.
    Tansu, Nelson
    OPTICS EXPRESS, 2009, 17 (16): : 13747 - 13757
12345