Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology

被引：9

作者：

El Sachat, A. ^{[1
,2
,3
]}

Reparaz, J. S. ^{[4
]}

Spiece, J. ^{[5
]}

Alonso, M., I ^{[4
]}

Goni, A. R. ^{[4
,6
]}

Garriga, M. ^{[4
]}

Vaccaro, P. O. ^{[4
]}

Wagner, M. R. ^{[1
,2
]}

Kolosov, O., V ^{[5
]}

Sotomayor Torres, C. M. ^{[1
,2
,6
]}

Alzina, F. ^{[1
,2
]}

机构：

[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, E-08193 Barcelona, Spain

[2] BIST, Campus UAB, E-08193 Barcelona, Spain

[3] Univ Autonoma Barcelona, Dept Phys, Campus UAB, E-08193 Bellaterra, Barcelona, Spain

[4] Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, E-08193 Bellaterra, Spain

[5] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England

[6] ICREA, Passeig Lluis Co 23, E-08010 Barcelona, Spain

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 50期

关键词：

Si1-xGex nanowires; SThM; thermal conductivity; thermal imaging; TEM-EDX; SIGE NANOWIRES; CONDUCTIVITY; GE; NANOSTRUCTURES; GROWTH; NANOSCALE; GERMANIUM; SILICON;

D O I：

10.1088/1361-6528/aa9497

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-xGex alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy (SThM), while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-xGex alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 Wm(-1) K-1. These results provide valuable information in growth processes and show the great capability of the SThM technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional techniques.

引用

页数：10

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