The equivalence of van der Ziel and BSIM4 models in modeling the induced gate noise of MOSFETs

被引：5

作者：

Goo, JS ^{[1
]}

Liu, W ^{[1
]}

Choi, CH ^{[1
]}

Green, KR ^{[1
]}

Yu, ZP ^{[1
]}

Lee, TH ^{[1
]}

Dutton, RW ^{[1
]}

机构：

[1] Stanford Univ, CIS, Stanford, CA 94305 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical relation between van der Ziel and BSIM4 models was studied for the induced gate noise of MOSFET devices. The noise parameters of the two models were measured and compared with those reproduced by exacted noise sources. In practical circuits acceptably small errors were observed for very low gate bias conditions. However, the two circuits can be considered as equivalent to each other in most practical circuits including non-grounded source operation conditions.

引用

页码：811 / 814

页数：4

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