Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

被引：3

作者：

Gurin, P. V. ^{[1
]}

Kul'bachinskii, V. A.

Danilov, Yu. A.

Zvonkov, B. N.

Aronzon, B. A.

Davydov, A. B.

Ryl'kov, V. V.

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia

[2] Nizhnii Novgorod State Univ, Nizhnii Novgorod Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

[3] Russian Res Ctr, IV Kurchatov Atom Energy Inst, Moscow 123182, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2007年 / 105卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Semiconductor quantum wells;

D O I：

10.1134/S1063776107070400

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T approximate to 30 K as the temperature increased.

引用

页码：181 / 184

页数：4

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