Effects of misfit dislocation interaction and 90°-type misfit dislocations on strain relaxation behavior in strained epilayer

被引：2
|
作者：
Jin, Z [1 ]
Yang, S [1 ]
An, H [1 ]
Wang, B [1 ]
Liu, S [1 ]
机构：
[1] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Changchun 210023, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/S0038-1101(98)00266-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of misfit dislocation interaction and 90 degrees-type misfit dislocations on strain relaxation behavior in a strained layer are considered theoretically. Our results show that the interaction of misfit dislocations is responsible for the large residual strain in the strained epilayer and that 90 degrees-type misfit dislocations play a very important role in the final stage of strain relaxation. The strain is relaxed more completely by 90 degrees misfit dislocations than by 60 degrees dislocations. The theory is consistent with experimental results. (C) 1998 Science Ltd. All rights reserved.
引用
收藏
页码：355 / 358
页数：4
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