Dry etching and induced damage

被引：16

作者：

vanderDrift, E ^{[1
]}

Cheung, R ^{[1
]}

Zijlstra, T ^{[1
]}

机构：

[1] ETH ZURICH, LAB ELECTROMAGNET FIELDS & MICROWAVE ELECT, CH-8092 ZURICH, SWITZERLAND

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 32卷 / 1-4期

关键词：

dry etching; plasma; damage; surface analysis; electrical characterisation; nanotechnology;

D O I：

10.1016/0167-9317(95)00175-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

More recent developments for better control and understanding of damage induced by dry etching are presented. Current low-damage dry etching techniques include decoupling of the chemical and physical fluxes and minimisation of ion impact, such as high-density plasmas and electron beam induced etching. From existing data, models are suggested to explain the effects of ion bombardment and chemical components on dry etching damage; the latter in particular for the compound semiconductors GaAs and SiGe. Future prospects are sketched, both for III-V and IV systems, for pushing the lateral dimensions beyond existing limits.

引用

页码：241 / 253

页数：13

共 67 条

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