High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

被引：14

作者：

Han, Dedong ^{[1
]}

Chen, Zhuofa ^{[1
]}

Cong, Yingying ^{[1
]}

Yu, Wen ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Flexible; high performance; tin-zinc-oxide (TZO); thin film transistor (TFT); A-IGZO TFTS; GLASS SUBSTRATE; MOBILITY;

D O I：

10.1109/TED.2016.2582524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Full transparent high-performance tin-zinc-oxide thin-film transistors (TZO TFTs) had been successfully fabricated on flexible plastic substrate by radio frequency (RF) sputtering. Excellent properties of TZO TFT with L-G = 10 mu m gate length were realized, namely high saturation mobility (mu(s)) of 175 cm(2)/V . s, high linear mobility (mu(l)) of 127 cm(2)/V . s, a suitable threshold voltage (V-th) of 1.81 V, a steep subthreshold swing (SS) of 220 mV/decade, an ON/OFF current ratio (I-ON/I-OFF) of similar to 1 x 10(8), and good transmittance of 91.9%, which compare favorably to those made on glass substrates. Mechanical stability of flexible TZO TFTs was investigated by bending tests. The flexible TZO TFTs exhibited good electrical performance, good uniformity, and good flexibility. Thereby, we demonstrated the feasibility of high-performance TZO TFTs for flexible display applications.

引用

页码：3360 / 3363

页数：4

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