2-D optimisation current-voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer

被引：5

作者：

Douara, Abdelmalek ^{[1
]}

Rabehi, Abdelaziz ^{[2
,3
]}

Djellouli, Bouaza ^{[4
]}

Ziane, Abderrezzaq ^{[5
]}

Abid, Hamza ^{[1
]}

机构：

[1] Univ Djillali Liabes Sidi Bel Abbes, Res Ctr, Appl Mat Lab, Sidi Bel Abbes, Algeria

[2] Ctr Univ Tissemsilt, Dept Elect, Inst Sci & Technol, Tissemsilt, Algeria

[3] Univ Djillali Liabes Sidi Bel Abbes, Lab Microelect Appl, Sidi Bel Abbes, Algeria

[4] Univ Saida, Lab Modeling & Calculat Methods LMCM, Saida, Algeria

[5] Ctr Dev Energies Renouvelables, Unite Rech Energies Renouvelables Milieu Saharien, URERMS, CDER, Adrar, Algeria

来源：

INTERNATIONAL JOURNAL OF AMBIENT ENERGY | 2021年 / 42卷 / 12期

关键词：

High electron mobility transistors; HEMTs; AlGaN/GaN; Nextnano; passivation layer; ELECTRON-MOBILITY TRANSISTOR; PERFORMANCE;

D O I：

10.1080/01430750.2019.1608856

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In the present work, the electrical characteristics of AlGaN/GaN high electron mobility transistors HEMTs is analysed using Nextnano device simulation software, The passivation layer which considered in this study, have been shown an important role on the gate leakage blocking and off-state breakdown voltage enhancement. We can see the influence of different types of passivation materials such as HfO2, Al2O3, and Si3N4 on the output and transfer characteristics of our device, and maximum drain current. A good agreement of the measured I-V characteristics with the simulated one was found which show clearly the validation of the calculation.

引用

页码：1363 / 1366

页数：4

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