Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth

被引：8

作者：

Chen, Shu-Lu ^{[1
]}

Griffin, Peter B. ^{[1
]}

Plummer, James D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期

关键词：

Energy-dispersive X-ray spectroscopy (EDX); gallium antimonide (GaSb); gallium arsenide (GaAs); molecular beam epitaxy (MBE); transmission electron microscopy (TEM); OVERGROWTH; EPITAXY; FILMS;

D O I：

10.1109/LED.2010.2045875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality III-V material on Si substrates has been a primary goal for ultimate device integration. By using the rapid melt growth (RMG) method, we have demonstrated the transformation of amorphous to single crystal for both GaAs and GaSb on bulk Si substrates. High-resolution pictures and selective area diffraction patterns show single-crystal films directly seeded from the Si substrate and propagated along the patterned stripes on top of the insulating layer. Energy-dispersive X-ray spectroscopy was applied to investigate the stoichiometry of the compound material after resolidification. The results show a direct relationship between crystal quality and atomic composition, which suggests a congruent growth for the III-V material during the solidification process despite the possibility of out gassing during the RMG process. This provides a simple path for monolithic optical-electrical integration.

引用

页码：597 / 599

页数：3

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