Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

被引：20

作者：

Polyakov, AY

Smirnov, NB

Govorkov, AV

Danilin, VN

Zhukova, TA

Luo, B

Ren, F

Gila, BP

Onstine, AH

Abernathy, CR

Pearton, SJ

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Sci & Prod Enterprise Pulsar, Moscow 105187, Russia

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1614839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sc2O3 thin-film layers deposited by rf plasma-assisted molecular-beam epitaxy were found to significantly reduce the concentration of prominent surface traps with activation energies of 1 and 0.9 eV on AlGaN/GaN high electron mobility transistors (HEMTs). The surface passivation is accompanied by effective mitigation of the current collapse observed under rf conditions in HEMTs without Sc2O3. The passivation is stable to post-deposition annealing temperatures of 400 degreesC and device degradation at higher temperatures is due to reaction of the gate metal with the AlGaN. (C) 2003 American Institute of Physics.

引用

页码：2608 / 2610

页数：3

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