Materials properties of nanostructured titanium nitride thin films synthesised by DC reactive magnetron sputtering

Titanium nitride (TiN) films were deposited on different substrates by reactive magnetron sputtering. X-ray diffraction analysis showed a preferential orientation along (111) and (200) for the sputtered TiN films on Si wafer. These films had a maximum reflectance of about 60% at 850 nm and local minimum reflectance at a wavelength of 480 nm. The good optical quality of the film was confirmed from the room temperature photoluminescence spectrum. The electrical resistivity was found to be 20 mu Omega cm. Scanning electron microscopy analysis indicated that the coatings are very regular with dense columnar structure. Surface topography was examined by atomic force microscopy. Laser Raman studies showed characteristic peaks were observed at 315 and 560 cm(-1).