Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/β-Ga2O3 Heterojunction

被引:23
作者
Park, Taejun [1 ]
Park, Sangbin [1 ]
Park, Joon Hui [2 ]
Min, Ji Young [2 ]
Jung, Yusup [3 ]
Kyoung, Sinsu [3 ]
Kang, Tai Young [3 ]
Kim, Kyunghwan [1 ]
Rim, You Seung [2 ]
Hong, Jeongsoo [1 ]
机构
[1] Gachon Univ, Coll IT Convergence, Dept Elect Engn, 1342 Seongnam Daero, Seongnam Si 13120, South Korea
[2] Sejong Univ, Dept Intelligent Mechatron Engn & Convergence Eng, 209 Neungdong Ro, Seoul 05006, South Korea
[3] PowerCubeSemi Inc, 686 Cheonggyesan Ro, Seongnam Si 13105, South Korea
关键词
Ag2O/beta-Ga2O3; heterojunction; deep ultraviolet; photodetector; post-annealing; OXIDE THIN-FILMS; SURFACE;
D O I
10.3390/nano12172983
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type beta-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 degrees C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 degrees C, the as-fabricated device had a low leakage current of 4.24 x 10(-11) A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 mu W/cm(2) light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 x 10(11) Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/beta-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
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页数:16
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