Measurement of temperature gradient in Czochralski silicon crystal growth

The temperature gradient in Czochralski (CZ) silicon crystal growth has been measured using a thermocouple of differential type. A temperature difference between two spatial points with a certain distance (5 mm) could be obtained simultaneously using only one set of thermocouples of the differential type. Silicon crystals of 70 mm diameter were grown with different growth rates, and temperature gradients near the growth interface were measured during the crystal growth. It is found that the temperature gradient in the CZ silicon crystal growth increases with increasing growth rate. A balance equation of heat transportation near the growth interface has been applied to examine the present experimental results, and it is satisfied very well. (C) 2001 Elsevier Science B.V. All rights reserved.