Application of plasma polymerized methylsilane in an all dry resist process for 193 and 248 nm lithography

被引：1
|
作者：
Joubert, O
Weidman, TW
Joshi, AM
Kostelak, RL
机构：
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
来源：
MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00244-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of Plasma Polymerized Methylsilane (PPMS) as a single layer and bilayer resist system at 248 nm advanced lithography are exposed. PPMS based photolithographic processed are shown to be extendible for use in 193 nm lithography.
引用
收藏
页码：275 / 278
页数：4
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