Influence of geometry factors of in situ dc glow discharge on the diamond nucleation in a hot-filament chemical vapor deposition system

被引:4
|
作者
Zhang, GF [1 ]
Buck, V [1 ]
机构
[1] Univ Essen Gesamthsch, Dept Phys, D-45117 Essen, Germany
关键词
diamond films; nucleation; geometry factor; DC glow discharge; physical vapor deposition;
D O I
10.1016/S0257-8972(00)00907-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of geometry factors, including the discharge power density and the area ratio of the substrate Si to the cathode electrode, of an in situ de glow discharge with and without hot-filament activation on the nucleation of diamond films on mirror-polished silicon substrates has been investigated. The nucleation density of diamond films on the center and at the edges of substrate was strongly enhanced by de glow discharge pre-treatments. However, there was a great difference in the nucleation density on the center and at the edges of the substrate surface due to the secondary discharge at the edge. This difference was related to the de discharge power density and the electrode geometry factor Phi. Oriented nucleation occurred at the edges under the conditions of higher de discharge power density. The nucleation enhancement was attributed to the formation of graphite or amorphous carbon during the pre-treatment step. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:256 / 261
页数:6
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