The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer

被引:681
作者
Schoelkopf, RJ [1 ]
Wahlgren, P
Kozhevnikov, AA
Delsing, P
Prober, DE
机构
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[2] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[3] Chalmers, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[4] Univ Goteborg, S-41296 Gothenburg, Sweden
关键词
D O I
10.1126/science.280.5367.1238
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from de to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 x 10(-5) e/root hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/f-noise-limited SET,and corresponds to an energy sensitivity (in joules per hertz) of about 41 (h) over bar.
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页码:1238 / 1242
页数:5
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