Optical, electrical properties and reproducible resistance switching of GeO2 thin films by sol-gel process

被引：28

作者：

Hsu, Cheng-Hsing ^{[1
]}

Lin, Jenn-Sen ^{[2
]}

He, Yi-Da ^{[1
]}

Yang, Shu-Fong ^{[1
]}

Yang, Pai-Chuan ^{[1
]}

Chen, Wen-Shiush ^{[1
]}

机构：

[1] Natl United Univ, Dept Elect Engn, Kung Ching Li 36003, Miao Li, Taiwan

[2] Natl United Univ, Dept Mech Engn, Kung Ching Li 36003, Miao Li, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 15期

关键词：

Sol-gel method; GeO2 thin film; Electrical properties; ReRAM; DEPOSITION;

D O I：

10.1016/j.tsf.2011.01.123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical, optical properties and microstructures of GeO2 thin films prepared by the sol-gel method on ITO substrates at different preheating and annealing temperatures have been investigated. All films exhibited GeO2 (101) orientations perpendicular to the substrate surface and the grain size increased with increasing preheating and annealing temperature. The dependence of the microstructure, optical transmittance spectra, optical bandgap and dielectric characteristics on preheating and annealing temperatures was also investigated. Considering the primary memory switching behavior of GeO2, ReRAM based on GeO2 shows promise for future nonvolatile memory applications. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5033 / 5037

页数：5

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