Thickness Impacts of Vacancy Defects in Epitaxial La0.7Sr0.3MnO3 Thin Films Using Slow Positron Beam

被引：1
|
作者：
Liu, Jian-dang [1 ]
Cheng, Bin [1 ]
Du, Huai-jiang [1 ]
Ye, Bang-jiao [1 ]
机构：
[1] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China
来源：
CHINESE JOURNAL OF CHEMICAL PHYSICS | 2010年 / 23卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Thin film; Giant magnetoresistance; Slow positron beam; Defect; METAL-INSULATOR-TRANSITION; MAGNETORESISTANCE;
D O I：
10.1088/1674-0068/23/06/685-688
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygen-ambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.
引用
收藏
页码：685 / 688
页数：4
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