Two-fraction electron system on a thin helium film

被引：7

作者：

Klier, J ^{[1
]}

Günzler, T

Würl, A

Leiderer, P

Mistura, G

Teske, E

Wyder, P

Shikin, V

机构：

[1] Univ Konstanz, Fak Phys, D-78434 Constance, Germany

[2] Univ Padua, I-35131 Padua, Italy

[3] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[4] ISSP, Chernogolovka 142432, Moscow Dist, Russia

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2001年 / 122卷 / 3-4期

关键词：

D O I：

10.1023/A:1004825623286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic theoretical investigation of microwave absorption of 2-dimensional electron systems above a thin helium film in the presence of a cyclotron resonance magnetic field is presented. To explain the measured data, a two-fraction structure of the electron system is introduced. One component corresponds to the free electron motion, the second one takes into account electron localization near the potential minimum caused by the roughness of the substrate. Within this model the general dependence of microwave absorption becomes understandable. The details of the observed cyclotron resonance line-shift are discussed.

引用

页码：451 / 458

页数：8

共 7 条

[1]

Blakemore J. S., 1962, SEMICONDUCTOR STAT

[2]

GUNZLER T, 1994, THESIS U KONSTANZ KO

[3] Microwave study of surface electrons on helium films in a magnetic field [J].