Growth pressure dependence of Cu2ZnSnSe4 properties

被引：55

作者：

Salome, P. M. P. ^{[1
,2
]}

Fernandes, P. A. ^{[1
,2
,3
]}

da Cunha, A. F. ^{[1
,2
]}

Leitao, J. P. ^{[1
,2
]}

Malaquias, J. ^{[1
,2
]}

Weber, A. ^{[4
]}

Gonzalez, J. C. ^{[5
]}

da Silva, M. I. N. ^{[6
]}

机构：

[1] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

[2] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[3] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal

[4] Helmholtz Zentrum Berlin Mat & Energie, Solar Energy Div, D-14109 Berlin, Germany

[5] Univ Fed Minas Gerais, Dept Fis, Inst Ciencias Exatas, BR-30123970 Belo Horizonte, MG, Brazil

[6] Lab Nanoscopia Fundacao Ctr Tecnol Minas Gerais C, BR-31170000 Belo Horizonte, MG, Brazil

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 12期

关键词：

Cu2ZnSnSe4; CZTSe; Selenization; Thin films; Chalcogenides; Solar cell absorber; THIN-FILMS; SOLAR-CELLS; SELENIZATION; ABSORBER; LAYERS;

D O I：

10.1016/j.solmat.2010.07.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTLSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photoluminescence spectrum of the CZTSe thin film. The band gap energy was estimated to be around 1.05 eV at room temperature, using the transmittance and reflectance data, and CZTSe samples show p-type conductivity with the hot point probe. The different characterization techniques show that we could grow single phase CZTSe thin films with our optimized process conditions. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2176 / 2180

页数：5

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