Decreased degradation of poly(p-phenylene vinylene) films at the indium-tin oxide interface

被引：4

作者：

Pocas, L. C. ^{[2
]}

Nogueira, S. L. ^{[1
]}

Nobuyasu, R. S. ^{[1
]}

Dalkiranis, Gustavo G. ^{[1
]}

Pires, M. J. M. ^{[3
]}

Tozoni, Jose R. ^{[1
]}

Silva, R. A. ^{[1
,3
]}

Marletta, Alexandre ^{[1
]}

机构：

[1] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG, Brazil

[2] Univ Tecnol Fed Parana UTFPR, BR-86812460 Apucarana, PR, Brazil

[3] Inst Nacl Metrol Normalizacao & Qualidade Ind, Div Metrol Mat, BR-25250020 Duque De Caxias, RJ, Brazil

来源：

JOURNAL OF MATERIALS SCIENCE | 2011年 / 46卷 / 08期

关键词：

LIGHT-EMITTING-DIODES; LOW-TEMPERATURES; PRECURSOR-ROUTE; DEVICES; SPECTRA;

D O I：

10.1007/s10853-010-5119-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article discusses a strategy to reduce the degradation of a poly(p-phenylene vinylene) (PPV) film at the interface with an indium-tin oxide (ITO) electrode. It consists of using a less aggressive leaving group, the sodium dodecylbenzenesulfonate salt (DBS), in the chemical synthesis of PPV starting with the polymer precursor, and performing the thermal conversion into PPV at a lower temperature (100 A degrees C) than in the conventional synthesis. The absorbance spectrum for an ITO/PPV + DBS film indicated that the polymer is less degraded and has the emission efficiency increased by ca. 4.5 times in comparison to ITO/PPV films obtained with the conventional procedures, i.e., with thermal conversion at 200 A degrees C, in vacuum, during 2 h. The main reason for the enhanced performance of the route reported in this article is a decrease in the oxygen concentration at the ITO/PPV interface, as inferred with X-ray Photoelectron Spectroscopy which corroborates the optical properties.

引用

页码：2644 / 2648

页数：5

共 23 条

[1]

[Anonymous], 2003, J PHOTOSCI

[2] Design of multilayered nanostructures and donor-acceptor interfaces in solution-processed thin-film organic solar cells [J].

Benten, Hiroaki ;

Ogawa, Michihiro ;

Ohkita, Hideo ;

Ito, Shinzaburo .

ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (10) :1563-1572

[3] PRECURSOR-ROUTE POLY(P-PHENYLENEVINYLENE) - POLYMER CHARACTERIZATION AND CONTROL OF ELECTRONIC-PROPERTIES [J].

BRADLEY, DDC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1987, 20 (11) :1389-1410

[4] Doping in PPV light-emitting devices fabricated on different substrates [J].

Brutting, W ;

Meier, M ;

Herold, M ;

Karg, S ;

Schwoerer, M .

CHEMICAL PHYSICS, 1998, 227 (1-2) :243-252

[5] Control of impurities in PPV light-emitting devices [J].

Brutting, W ;

Meier, M ;

Herold, M ;

Karg, S ;

Schwoerer, M .

SYNTHETIC METALS, 1997, 91 (1-3) :163-168

[6] Photoluminescence spectra of oligo-paraphenylenevinylenes: a joint theoretical and experimental characterization [J].

Cornil, J ;

Beljonne, D ;

Heller, CM ;

Campbell, IH ;

Laurich, BK ;

Smith, DL ;

Bradley, DDC ;

Mullen, K ;

Bredas, JL .

CHEMICAL PHYSICS LETTERS, 1997, 278 (1-3) :139-145

[7]

Cumpston BH, 1996, TRENDS POLYM SCI, V4, P151

[8] Poly(p-phenylene vinylene) light-emitting devices prepared via the precursor route onto indium tin oxide and fluorine-doped tin dioxide substrates [J].

Herold, M ;

Gmeiner, J ;

Drummer, C ;

Schwoerer, M .

JOURNAL OF MATERIALS SCIENCE, 1997, 32 (21) :5709-5715

[9] Light-emitting diodes based on poly-p-phenylene-vinylene .1. Charge-carrier injection and transport [J].

Karg, S ;

Meier, M ;

Riess, W .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) :1951-1960

[10]

Kern W., 1984, Semiconductor International, V7, P94

← 1 2 3 →