Features of dislocation images reconstructed from step-scanned white X-ray section topographs

被引:8
作者
Kajiwara, Kentaro
Kawado, Seiji
Iida, Satoshi
Suzuki, Yoshifumi
Chikaura, Yoshinori
机构
[1] Japan Synchroton Radiat Res Inst, Ind Appl Div, Hyogo 6795198, Japan
[2] Rigaku Corp, Tokyo 1968666, Japan
[3] Toyama Univ, Dept Phys, Toyama 930, Japan
[4] Kyushu Inst Technol, Grad Sch Engn, Fukuoka 8048550, Japan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 08期
关键词
D O I
10.1002/pssa.200675677
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have observed dislocations in a CZ-silicon crystal using step-scanning white X-ray section topography and examined the feature of the dislocation images reconstructed by stacking 200 shots of section topographs. These topographs were obtained from symmetric 004-reflection in the Laue case using 20, 30, and 60 keV X-rays. Direct images, intermediary images, and dynamical images of dislocations were observed in a tomogram, i.e., a sliced image obtained from the stacked section topographs, and the contrast of the dynamical images was reduced with increasing X-ray energy. The stacked section topographs provided three-dimensional images of the dislocations based on the direct images, and the sliced image enabled us to observe the dislocations separately in a highly dislocated region of the CZ-silicon crystal. (c) 2007 WILEY-NCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2682 / 2687
页数:6
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