Doping effect on the thermoelectric transport properties of HfTe5

被引:2
|
作者
Hu, Junfeng [1 ,2 ]
Yu, Haiming [1 ]
Ansermet, Jean-Philippe [2 ]
机构
[1] Beihang Univ, Sch Microelect, BDBC, Fert Beijing Inst, Xueyuan Rd 37, Beijing 100191, Peoples R China
[2] Ecole Polytech Fed Lausanne, Inst Phys, Stn 3, CH-1015 Lausanne, Switzerland
基金
中国国家自然科学基金;
关键词
POWER;
D O I
10.1063/1.5127804
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We studied the influence of doping HfTe5 with 5% Ti on electric (resistivity and the Hall effect) and thermoelectric transport properties (the Seebeck coefficient, magneto-thermoelectric power, and Nernst effect). The properties of 5% Ti-doped HfTe5 do not change much. Nernst coefficients larger than magneto-thermoelectric power were observed in a temperature range near the compensation temperature at which the Seebeck coefficient vanishes. This indicates that a two-carrier conduction model could describe our experimental results. Owing to the high thermoelectric performance, thermopiles were made on a printed circuit board based on doped and undoped HfTe5. A large Seebeck voltage was obtained at room temperature. It became even larger in a low temperature range and presented strong magnetic field dependence.
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页数:4
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