Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °C

The emphasis on ubiquitous technology means that future technological applications will depend heavily on transparent conducting materials. To facilitate truly ubiquitous applications, transparent conductors should be fabricated at low temperatures (<50 degrees C). Here, we demonstrate an instantaneous (<100 ns) and low-temperature (<45 degrees C at the substrate) method, excimer laser irradiation, for the transformation of an a-InGaZnO semiconductor into a transparent highly conductive oxide with performance rivaling traditional and emerging transparent conductors. Our analysis shows that the instantaneous and substantial conductivity enhancement is due to the generation of a large amount of oxygen vacancies in a-InGaZnO after irradiation. The method's combination of low temperature, extremely rapid process, and applicability to other materials will create a new class of transparent conductors for the high-throughput roll-to-roll fabrication of future flexible devices.