Carrier spin relaxation in InGaAs/AlAsSb quantum wells

被引：0

作者：

Nukui, T. ^{[1
]}

Gozu, S. ^{[2
]}

Mozume, T. ^{[2
]}

Izumi, S. ^{[1
]}

Saeki, Y. ^{[1
]}

Tackeuchi, A. ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Sci, Shinjuku Ku, Tokyo 1698555, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Dynamics; Electronics; Excitons; GaAs; DYNAMICS;

D O I：

10.1063/1.3666549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.38 mu m-electron-heavy-hole excitons at 150 K is obtained to be 34 43 ps at an excitation power of 50 80 mW. The observed carrier density dependence and temperature independence of the spin relaxation time indicate that the spin relaxation mechanism is dominated by the Bir-Aronov-Pikus process.

引用

页数：2

共 9 条

[1] Exciton spin dynamics in GaAs quantum wells
Adachi, S
Miyashita, T
Takeyama, S
Takagi, Y
Tackeuchi, A
[J]. JOURNAL OF LUMINESCENCE, 1997, 72-4 : 307 - 308
[2] Exciton spin relaxation dynamics in InGaAs/InP quantum wells
Akasaka, S
Miyata, S
Kuroda, T
Tackeuchi, A
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2083 - 2085
[3] All-optical demultiplexing of 160-10 Gbit/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well
Akimoto, R.
Simoyama, T.
Tsuchida, H.
Namiki, S.
Lim, C. G.
Nagase, M.
Mozume, T.
Hasama, T.
Ishikawa, H.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (22)
[4] Picosecond all-optical polarization switching in InGaAsP MQW's at 1.52 μm
Hyland, JT
Kennedy, GT
Miller, A
Button, CC
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (10) : 1419 - 1421
[5] Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells
Izumi, Sotaro
Gozu, Shin-Ichiro
Mozume, Teruo
Saeki, Yu
Nukui, Takao
Tackeuchi, Atsushi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[6] Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers
Kasai, J
Mozume, T
[J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 183 - 187
[7] Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power
Matsui, Y
Vakhshoori, D
Wang, PD
Chen, PL
Lu, CC
Jiang, M
Knopp, K
Burroughs, S
Tayebati, P
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (09) : 1037 - 1048
[8] ALL-OPTICAL PICOSECOND SWITCHING OF A QUANTUM-WELL ETALON USING SPIN-POLARIZATION RELAXATION
NISHIKAWA, Y
TACKEUCHI, A
NAKAMURA, S
MUTO, S
YOKOYAMA, N
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (07) : 839 - 841
[9] DIRECT OBSERVATION OF PICOSECOND SPIN RELAXATION OF EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS USING SPIN-DEPENDENT OPTICAL NONLINEARITY
TACKEUCHI, A
MUTO, S
INATA, T
FUJII, T
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (22) : 2213 - 2215

← 1 →