Fabrication method for multiple wavelength vertical-cavity emitter arrays by SiNx layer thickness control

被引：12

作者：

Shin, JH ^{[1
]}

Yoo, BS ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Yusong Gu, Taejon 305600, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 05期

关键词：

lasers; semiconductor laser arrays; spectral analysis; surface-emitting lasers; wavelength-division multiplexing;

D O I：

10.1109/68.759381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report very narrow and equally spaced eight-channel multiple-wavelength vertical-cavity emitter arrays emitting from 855 to 862 nm with the average spacing of 0.94 nm, For the postgrowth wavelength adjustment, a binary-coded multistep ion-beam etching technique is applied to control the thickness of a SiNx tuning layer located on the first Al0.15Ga0.85As quarter-wave layer above the active region. Our result indicates the possibility of the precisely spaced vertical-cavity surface-emitting laser arrays using this kind of postgrowth wavelength adjustment technique.

引用

页码：509 / 511

页数：3

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