High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

被引：39

作者：

Miyata, Yasuo ^{[1
]}

Yoshikawa, Eiji ^{[1
]}

Minari, Takeo ^{[2
,3
]}

Tsukagoshi, Kazuhito ^{[2
,4
]}

Yamaguchi, Shigehiro ^{[5
]}

机构：

[1] Sumitomo Chem Co Ltd, Organ Synth Res Lab, Konohana Ku, Osaka 5548558, Japan

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[3] RIKEN, Wako, Saitama 3510198, Japan

[4] Japan Sci & Technol Agcy JST, Kawaguchi, Saitama 3320012, Japan

[5] Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Nagoya, Aichi 4648602, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 16期

关键词：

SEMICONDUCTORS; HETEROACENES; THIOPHENE;

D O I：

10.1039/c2jm30840a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel thienoacene compound, dihexyl-substituted dibenzo[d,d']thieno[3,2-b;4,5-b']dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm(2) V-1 s(-1) are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 degrees C, respectively.

引用

页码：7715 / 7717

页数：3

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