High-performance organic field-effect transistors based on dihexyl-substituted dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene

被引：37
作者：
Miyata, Yasuo [1 ]
Yoshikawa, Eiji [1 ]
Minari, Takeo [2 ,3 ]
Tsukagoshi, Kazuhito [2 ,4 ]
Yamaguchi, Shigehiro [5 ]
机构：
[1] Sumitomo Chem Co Ltd, Organ Synth Res Lab, Konohana Ku, Osaka 5548558, Japan
[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[3] RIKEN, Wako, Saitama 3510198, Japan
[4] Japan Sci & Technol Agcy JST, Kawaguchi, Saitama 3320012, Japan
[5] Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Nagoya, Aichi 4648602, Japan
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2012年 / 22卷 / 16期
关键词：
SEMICONDUCTORS; HETEROACENES; THIOPHENE;
D O I：
10.1039/c2jm30840a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A novel thienoacene compound, dihexyl-substituted dibenzo[d,d']thieno[3,2-b;4,5-b']dithiophene (C6-DBTDT), is developed as a p-type organic semiconductor for high-performance organic field-effect transistors. Insertion of an acceptor material at the contact interface enables substantial reduction in the threshold voltage and hysteresis behavior, and the field-effect mobilities of 2.5 and 3.1 cm(2) V-1 s(-1) are achieved for the C6-DBTDT film vacuum-deposited at room temperature and 80 degrees C, respectively.
引用
收藏
页码：7715 / 7717
页数：3
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