Bright Multicolored Photoluminescence of Hybrid Graphene/Silicon Optoelectronics

被引:15
作者
Liu, Ken [1 ]
Zhu, Zhi Hong [1 ]
Li, Xiu Jian [2 ]
Zhang, Jian Fa [1 ]
Yuan, Xiao Dong [1 ,3 ]
Guo, Chu Cai [1 ]
Xu, Wei [1 ]
Qin, Shi Qiao [1 ,3 ]
机构
[1] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
[3] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
来源
ACS PHOTONICS | 2015年 / 2卷 / 07期
基金
中国国家自然科学基金;
关键词
graphene; silicon; frequency-upconverted photoluminescence; broadband; hot carrier multiplication; hot carrier scattering; CARRIER MULTIPLICATION; SCATTERING; PHOTODETECTOR;
D O I
10.1021/acsphotonics.5b00051
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Graphene does not possess a band gap, and hot carrier relaxation in graphene is an ultrafast processs. This leads to a very low emission efficiency of graphene. We demonstrate bright multicolored frequency-upconverted photoluminescence from graphene via three-photon absorption by femtosecond laser injection at a communication wavelength 1.57 mu m. The broadband and multiwavelength emission from graphene is based on the model of ultrafast electron-hole pair recombination and asymmetrical energized electron-hole radiation recombination in graphene. Furthermore, we show photoluminescence variation with blue light emission in the graphene/silicon hybrid system, with 2-3 orders of emission efficiency increase. The results demonstrate hot carrier multiplication and hot carrier scattering in graphene and could help to study the population inversion and broadband lasing of graphene.
引用
收藏
页码:797 / 804
页数:8
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