Linear arrays of CaF2 nanostructures on Si

被引：68

作者：

Viernow, J

Petrovykh, DY

Men, FK

Kirakosian, A

Lin, JL

Himpsel, FJ

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[2] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[3] Natl Chung Cheng Univ, Dept Phys, Tainan, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation layer, dots directly on Si. The stripes have a precision of +/-1 nm, are continuous, do not touch each other, and are attached to the top of the step edges. The stripe repulsion and their counter-intuitive attachment are explained via a reversal of the stacking at the CaF2/Si(111) interface. The dot density is 3X10(11) cm(-2)=2 Teradots/in.(2). These arrays may serve as masks in nanolithography. (C) 1999 American Institute of Physics. [S0003-6951(99)01115-8].

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页码：2125 / 2127

页数：3

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