Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates

被引：44

作者：

Zhong, Z

Schmidt, OG

Bauer, G

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Johannes Kepler Univ, Inst Semicond Phys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 13期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1063/1.2061870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Site-controlled groups of Ge islands are grown on pit-patterned Si (001) substrates. By varying the deposited amount of Ge, we find that the growth starts with the formation of a single island at the pit bottom and then proceeds to the formation of a highly symmetric Ge island group around the pit top. A bimodal size distribution of dome-shaped islands at the bottom and at the top corners of the pits is observed. A growth mechanism is proposed to qualitatively explain these phenomena. Our experiments help to promote a further understanding of Ge island growth on patterned substrates. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 20 条

[1] Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning [J].

Borgström, M ;

Zela, V ;

Seifert, W .

NANOTECHNOLOGY, 2003, 14 (02) :264-267

[2] Self-assembly of quantum-dot molecules: Heterogeneous nucleation of SiGe islands on Si(100) [J].

Deng, X ;

Krishnamurthy, M .

PHYSICAL REVIEW LETTERS, 1998, 81 (07) :1473-1476

[3] Morphology response to strain field interferences in stacks of highly ordered quantum dot arrays -: art. no. 196103 [J].

Heidemeyer, H ;

Denker, U ;

Müller, C ;

Schmidt, OG .

PHYSICAL REVIEW LETTERS, 2003, 91 (19)

[4] Self-limiting growth of strained faceted islands [J].

Jesson, DE ;

Chen, G ;

Chen, KM ;

Pennycook, SJ .

PHYSICAL REVIEW LETTERS, 1998, 80 (23) :5156-5159

[5] Regimented placement of self-assembled Ge dots on selectively grown Si mesas [J].

Jin, G ;

Liu, JL ;

Wang, KL .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3591-3593

[6] Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties [J].

Kim, ES ;

Usami, N ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1617-1619

[7] Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(001) substrates [J].

Lichtenberger, H ;

Mühlberger, M ;

Schelling, C ;

Schäffler, F .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :78-82

[8] Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication [J].

Omi, H ;

Bottomley, DJ ;

Ogino, T .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1073-1075

[9] Transition states between pyramids and domes during Ge/Si island growth [J].

Ross, FM ;

Tromp, RM ;

Reuter, MC .

SCIENCE, 1999, 286 (5446) :1931-1934

[10] Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes [J].

Schmidt, OG ;

Deneke, C ;

Kiravittaya, S ;

Songmuang, R ;

Heidemeyer, H ;

Nakamura, Y ;

Zapf-Gottwick, R ;

Müller, C ;

Jin-Phillipp, NY .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (05) :1025-1034

← 1 2 →