Temperature oscillation as a real-time monitoring of the growth of 3C-SiC on Si substrate

被引：3

作者：

Saito, Eiji ^{[1
]}

Konno, Atsushi ^{[1
]}

Ito, Takashi ^{[1
]}

Yasui, Kanji ^{[2
]}

Nakazawa, Hideki ^{[3
]}

Endoh, Tetsuo ^{[4
]}

Narita, Yuzuru ^{[5
]}

Suemitsu, Maki ^{[1
]}

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

[3] Hirosaki Univ, Dept Mat Sci & Technol, Hirosaki, Aomori 0368561, Japan

[4] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[5] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期

关键词：

pyrometric interferometry; 3C-SiC; GSMBE; heteroepitaxy;

D O I：

10.1016/j.apsusc.2008.02.190

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the "temperature oscillation'' is shown to correspond to lambda/2n, with the lambda and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：6235 / 6237

页数：3

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