A micromachined nanoindentation force sensor

被引：19

作者：

Nafari, A

Danilov, A

Rödjegård, H

Enoksson, P

Olin, H

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Solid State Elect Lab, SE-41296 Gothenburg, Sweden

[2] Mid Sweden Univ, Dept Engn Math & Phys, SE-85170 Sundsvall, Sweden

[3] Nanofactory Instruments AB, SE-41258 Gothenburg, Sweden

[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[5] Imego AB, SE-41133 Gothenburg, Sweden

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 123-24卷

关键词：

force sensor; capacitive detection; nanoindentation; microfabrication; transmission electron microscope; interchangeable tip;

D O I：

10.1016/j.sna.2005.03.068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A capacitive force sensor for in situ nanoindentation experiments in TEM has been designed, manufactured and evaluated. The confined space of the TEM specimen holder restricts the size of the fabricated sensor to 2 turn x 1.5 mm x 2 mm to allow mounting. A unique feature of the sensor is an integrated fixture for interchangeable tips, e.g. diamond tips. The sensor is fabricated in silicon anodically bonded to glass and the device is formed by DRIE. To improve the control of spring thickness and circumvent problems during fabrication a SOI wafer and slightly altered design was used in conjunction to an improved process, which resulted in a yield near 100%. The sensor is characterized by a force application using a piezoelectric positioning system, an electrostatic evaluation and a resonance frequency test using a scanning laser doppler vibrometer. The capacitance is measured with an off-chip read-out circuit. The resonance frequency test yielded a spring constant of 750 N/m, which results in a sensitivity of 0.27 pF/0.1 mu N for small deflections. The evaluation shows that the force sensor is suitable for in situ nanoindentation for measurements in the range of 0-100 mu N. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：44 / 49

页数：6

共 10 条

[1]

Li XD, 2002, MATER CHARACT, V48, P11, DOI 10.1016/S1044-5803(02)00192-4

[2] Room temperature dislocation plasticity in silicon [J].

Minor, AM ;

Lilleodden, ET ;

Jin, M ;

Stach, EA ;

Chrzan, DC ;

Morris, JW .

PHILOSOPHICAL MAGAZINE, 2005, 85 (2-3) :323-330

[3] Quantitative in situ nanoindentation in an electron microscope [J].

Minor, AM ;

Morris, JW ;

Stach, EA .

APPLIED PHYSICS LETTERS, 2001, 79 (11) :1625-1627

[4]

MINOR AM, 2003, J MATER RES, V19, P178

[5]

RODJEGARD H, 2004, P MICR WORKSH YST SW, P93

[6] Grain boundary-mediated plasticity in nanocrystalline nickel [J].

Shan, ZW ;

Stach, EA ;

Wiezorek, JMK ;

Knapp, JA ;

Follstaedt, DM ;

Mao, SX .

SCIENCE, 2004, 305 (5684) :654-657

[7]

Stach EA, 2001, MICROSC MICROANAL, V7, P507, DOI 10.1007/s10005-001-0012-4

[8] Compact design of a transmission electron microscope-scanning tunneling microscope holder with three-dimensional coarse motion [J].

Svensson, K ;

Jompol, Y ;

Olin, H ;

Olsson, E .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (11) :4945-4947

[9]

Wall MA, 1998, MICROSC RES TECHNIQ, V42, P248, DOI 10.1002/(SICI)1097-0029(19980915)42:4<248::AID-JEMT3>3.0.CO

[10]

2-M

← 1 →