Electron interference from an amorphous thin film on a crystal transmission electron microscopy specimen

被引:2
作者
Herring, Rodney A. [1 ]
Saitoh, Koh [2 ]
Tanji, Takayoshi [2 ]
Tanaka, Nobuo [2 ]
机构
[1] Univ Victoria, CAMTEC, MENG, Victoria, BC V8W 3P6, Canada
[2] Nagoya Univ, EcoTopia, Nagoya, Aichi 4618603, Japan
来源
JOURNAL OF ELECTRON MICROSCOPY | 2012年 / 61卷 / 01期
基金
日本学术振兴会;
关键词
amorphous materials; electron holography; phase information; structure factors; DIFFRACTED-BEAM INTERFEROMETRY/HOLOGRAPHY; DISORDERED MATERIALS; FLUCTUATION MICROSCOPY; HOLOGRAPHY; COHERENCE;
D O I
10.1093/jmicro/dfr087
中图分类号
TH742 [显微镜];
学科分类号
摘要
The electron intensity of a beam from an amorphous surface layer on a crystal transmission electron microscopy (TEM) specimen has been found to have sufficient coherence to produce fringes in interferograms, created by interfering two electron diffracted beams from the crystal, using a method of electron interference referred to as diffracted beam interferometry. This interference method involves amplitude splitting of the electron beam by means of a crystal with a thin amorphous layer on its surface. The amorphous intensity is transferred along with the crystal's Bragg diffracted beams and is then self-interfered when the crystal's Bragg diffracted beams are interfered by an electron biprism. The interference fringes in the interferograms exist in low to high electron scattering angles. The spatial frequency of the amorphous intensity fringes depends on the Bragg angle of the crystal's interfered diffracted beams. It is shown that the absolute phase of the amorphous intensity is possibly obtained using a Cs-corrected TEM and two interfering diffracted beams having equal but opposite phases. This method of interference is a good step towards measuring the phase of amorphous materials that is useful in determining their complex atomic structures.
引用
收藏
页码:17 / 23
页数:7
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