Segregation of boron to polycrystalline and single-crystal Si1-x-yGexCy and Si1-yCy layers

被引：0

作者：

Stewart, EJ ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期

关键词：

boron; segregation; diffusion; Si1-x-yGexCy; polycrystalline;

D O I：

10.1016/j.apsusc.2003.08.044

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Strong boron segregation to polycrystalline, Si1-x-yGexCy alloys from Si has previously been reported [MRS Symp. Proc. 669 (2001) J6.9]. In this study, we investigate potential mechanisms for this effect. We find that comparable segregation also occurs in both polycrystalline Si1-yCy and single-crystal Si1-x-yGexCy indicating neither Ge nor grain boundary effects are needed for it to occur. In addition, the stability of the electrical properties of polycrystalline Si1-x-yGexCy with annealing suggests that inactive B-C defects are not forming. Point defect gradients are presented as a mechanism consistent with the electrical data. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：87 / 90

页数：4

共 10 条

[1] Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidation
Carroll, MS
Sturm, JC
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1225 - 1227
[2] Fang TT, 1996, APPL PHYS LETT, V68, P791, DOI 10.1063/1.116534
[3] EXPERIMENTAL-STUDY OF DIFFUSION AND SEGREGATION IN A SI-(GEXSI1-X) HETEROSTRUCTURE
HU, SM
AHLGREN, DC
RONSHEIM, PA
CHU, JO
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (11) : 1450 - 1453
[4] DIFFUSION AND SEGREGATION IN HETEROSTRUCTURES - THEORY, 2 LIMITING CASES, AND INTERNAL STRAIN
HU, SM
[J]. PHYSICAL REVIEW B, 1992, 45 (08): : 4498 - 4501
[5] Boron diffusion across silicon-silicon germanium boundaries
Lever, RF
Bonar, JM
Willoughby, AFW
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 1988 - 1994
[6] Ab initio modeling and experimental study of C-B interactions in Si
Liu, CL
Windl, W
Borucki, L
Lu, SF
Liu, XY
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (01) : 52 - 54
[7] Rafferty C. S., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P311, DOI 10.1109/IEDM.1993.347345
[8] Carbon-induced undersaturation of silicon self-interstitials
Scholz, R
Gosele, U
Huh, JY
Tan, TY
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (02) : 200 - 202
[9] Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers
Stewart, EJ
Carroll, MS
Sturm, JC
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (12) : 574 - 576
[10] STEWART EJ, 2001, MRS S P, V669

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