Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

被引：188

作者：

Vobornik, Ivana ^{[1
]}

Manju, Unnikrishnan ^{[2
]}

Fujii, Jun ^{[1
]}

Borgatti, Francesco ^{[3
]}

Torelli, Piero ^{[1
]}

Krizmancic, Damjan ^{[1
]}

Hor, Yew San ^{[4
]}

Cava, Robert J. ^{[4
]}

Panaccione, Giancarlo ^{[1
]}

机构：

[1] CNR, IOM, Lab TASC, I-34149 Trieste, Italy

[2] Abdus Salaam Int Ctr Theoret Phys, I-34100 Trieste, Italy

[3] CNR, ISMN, I-40129 Bologna, Italy

[4] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 10期

基金：

美国国家科学基金会;

关键词：

Topological insulators; ferromagnetism; magnetic proximity effect; X-ray magnetic circular dichroism; SURFACE; SPECTRA;

D O I：

10.1021/nl201275q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

引用

页码：4079 / 4082

页数：4

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