Preparation and characterization of Ba1-xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method

被引：10

作者：

Zhang, RB ^{[1
]}

Yang, CS ^{[1
]}

Ding, GP ^{[1
]}

Feng, J ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Minist Educ, Key Lab Thin Film & Microfabricat Technol, Shanghai 200030, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2005年 / 40卷 / 09期

关键词：

electronic materials; nanostructures; thin films; sol-gel chemistry; X-ray diffraction; dielectric properties;

D O I：

10.1016/j.materresbull.2005.04.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BST thin films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Stoichiometric (Ba1-xSrx)TiO3 (BST) thin films have been prepared on Pt/SiO2/Si substrates using sol- gel method. The BST films were characterized by X-ray fluorescence (XRF) spectroscopy analysis, X-ray diffraction (XRD), scanning, electron microscope (SEM) and electrical measurements. The relationships of processing parameters, microstructures, and dielectric properties are discussed. The results show that the films exhibit pure perovskite phase through rapid thermal anneal at 700 degrees C and their grain sizes are about 20-40 nm. The dielectric constants of BST5, BST10, BST15 and BST20 are 323, 355, 382 and 405, respectively, at 80 kHz. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1490 / 1496

页数：7

共 12 条

[1] Influence of pH on structural and electrical properties of sol-gel derived (Ba, Sr)TiO3 thin films under humid conditions [J].