Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells

被引:2
作者
Hyung, Jung-Hwan [1 ]
Kim, Gil-Sung [2 ]
Jeong, Jin-Tak [2 ]
Choi, In-Hwan [2 ]
Hong, Chang-Hee [1 ]
Yun, Seoungjin [3 ]
Koh, Jung-Hyuk [4 ]
Lee, Sang-Kwon [2 ]
机构
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
[3] Yonsei Univ, Yonsei Inst Green, Seoul 120749, South Korea
[4] Chung Aug Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
基金
新加坡国家研究基金会;
关键词
PEDOT:PSS; Schottky Junction Diode; Electrical Degradation; Current-Voltage Measurement; Power Conversion Efficiency; SILICON;
D O I
10.1166/jno.2015.1736
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have recently reported on the electrical transport characteristics of PEDOT:PSS/n-Si Schottky junction diodes, which demonstrated excellent rectifying behavior. In this study, we investigated in further detail the electrical transport properties of Schottky diodes and the electrical degradation in PEDOT:PSS-based solar cells. To examine the electrical properties, Schottky barrier heights, and ideality factors of Au/PEDOT:PSS/n-Si Schottky diodes, both current-voltage and capacitance-voltage measurements were conducted. In addition, we fabricated hybrid PEDOT:PSS/n-Si solar cells to compare the electrical degradation of the devices with and without polymethylmethacrylate (PMMA) layers. Our experimental results suggest that the presence of a PMMA layer in a PEDOT:PSS/n-Si solar cell significantly reduces the electrical degradation resulting from air exposures of up to 10 days.
引用
收藏
页码:229 / 233
页数:5
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