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Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells
被引:2
作者:

Hyung, Jung-Hwan
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Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

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Jeong, Jin-Tak
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Chung Ang Univ, Dept Phys, Seoul 156756, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

Choi, In-Hwan
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Chung Ang Univ, Dept Phys, Seoul 156756, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

Hong, Chang-Hee
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Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

Yun, Seoungjin
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Yonsei Univ, Yonsei Inst Green, Seoul 120749, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

Koh, Jung-Hyuk
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Chung Aug Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea

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机构:
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
[3] Yonsei Univ, Yonsei Inst Green, Seoul 120749, South Korea
[4] Chung Aug Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
基金:
新加坡国家研究基金会;
关键词:
PEDOT:PSS;
Schottky Junction Diode;
Electrical Degradation;
Current-Voltage Measurement;
Power Conversion Efficiency;
SILICON;
D O I:
10.1166/jno.2015.1736
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We have recently reported on the electrical transport characteristics of PEDOT:PSS/n-Si Schottky junction diodes, which demonstrated excellent rectifying behavior. In this study, we investigated in further detail the electrical transport properties of Schottky diodes and the electrical degradation in PEDOT:PSS-based solar cells. To examine the electrical properties, Schottky barrier heights, and ideality factors of Au/PEDOT:PSS/n-Si Schottky diodes, both current-voltage and capacitance-voltage measurements were conducted. In addition, we fabricated hybrid PEDOT:PSS/n-Si solar cells to compare the electrical degradation of the devices with and without polymethylmethacrylate (PMMA) layers. Our experimental results suggest that the presence of a PMMA layer in a PEDOT:PSS/n-Si solar cell significantly reduces the electrical degradation resulting from air exposures of up to 10 days.
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页码:229 / 233
页数:5
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