Characteristics of 4H-SiC MOS interface annealed in N2O

被引：65

作者：

Fujihira, K ^{[1
]}

Tarui, Y ^{[1
]}

Imaizumi, M ^{[1
]}

Ohtsuka, K ^{[1
]}

Takami, T ^{[1
]}

Shiramizu, T ^{[1
]}

Kawase, K ^{[1
]}

Tanimura, J ^{[1
]}

Ozeki, T ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 06期

关键词：

silicon carbide; oxidation; nitridation; channel mobility; interface state density; MOSFET;

D O I：

10.1016/j.sse.2004.10.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC(0001) MOSFET annealed in N2O at below 1150 degrees C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C-V measurement of n-type MOS capacitors, the interface state density is revealed to decrease at higher anneal temperature. The field effect mobility of 30 cm(2)/Vs is achieved by 1150 degrees C anneal for 3 h, which is about 10 times higher than that of not annealed MOSFET. Epitaxial n-channel MOSFET annealed in N2O has been also fabricated. A positive threshold voltage of 0.46 V and the field effect mobility of 45 cm(2)/Vs are attained. The effective mobility at 2.5 MV/cm is 34 cm(2)/Vs, which is five times higher than that for not annealed sample, suggesting that the N2O anneal improves the MOS interface quality. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：896 / 901

页数：6

共 15 条

[1] High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy
Chang, KC
Nuhfer, NT
Porter, LM
Wahab, Q
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2186 - 2188
[2] Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Chung, GY
Tin, CC
Williams, JR
McDonald, K
Chanana, RK
Weller, RA
Pantelides, ST
Feldman, LC
Holland, OW
Das, MK
Palmour, JW
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) : 176 - 178
[3] Status and prospects for SiC power MOSFETs
Cooper, JA
Melloch, MR
Singh, R
Agarwal, A
Palmour, JW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 658 - 664
[4] High channel mobility in normally-off 4H-SiC buried channel MOSFETs
Harada, S
Suzuki, S
Senzaki, J
Kosugi, R
Adachi, K
Fukuda, K
Arai, K
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (06) : 272 - 274
[5] Fabrication and initial characterization of 4H-SiC epilayer channel MOSFETs
Imaizumi, M
Tarui, Y
Sugimoto, H
Ohtsuka, K
Takami, T
Ozeki, T
[J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1203 - 1206
[6] Effects of nitridation in gate oxides grown on 4H-SiC
Jamet, P
Dimitrijev, S
Tanner, P
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5058 - 5063
[7] Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)
Jernigan, GG
Stahlbush, RE
Das, MK
Cooper, JA
Lipkin, LA
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1448 - 1450
[8] High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient
Kanzaki, Y
Kinbara, H
Kosugi, H
Suda, J
Kimoto, T
Matsunami, H
[J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1429 - 1432
[9] High-voltage (3 kV) UMOSFETs in 4H-SiC
Li, Y
Cooper, JA
Capano, MA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) : 972 - 975
[10] N2O processing improves the 4H-SiC:SiO2 interface
Lipkin, LA
Das, MK
Palmour, JW
[J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 985 - 988

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