Determination of the concentration of deep levels in semi-insulating CdS single crystals by photoinduced-current transient spectroscopy

被引：9

作者：

Odrinskii, AP ^{[1
]}

机构：

[1] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk 210717, BELARUS

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 06期

关键词：

D O I：

10.1134/1.1944850

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Deep levels in semi-insulating CdS single crystals grown with a variation in the stoichiometric composition are investigated by photoinduced-current transient spectroscopy (PICTS). A series of deep levels with a thermal activation energy ranging from 0.066-0.54 eV is revealed. It is found that the signal ratio in the set of spectra disagrees with the basic PICTS model. A procedure for evaluation of the concentration of deep levels is developed for these conditions. (c) 2005 Pleiades Publishing, Inc.

引用

页码：629 / 635

页数：7

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