Determination of the concentration of deep levels in semi-insulating CdS single crystals by photoinduced-current transient spectroscopy

被引：9
作者：
Odrinskii, AP [1 ]
机构：
[1] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk 210717, BELARUS
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 06期
关键词：
D O I：
10.1134/1.1944850
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Deep levels in semi-insulating CdS single crystals grown with a variation in the stoichiometric composition are investigated by photoinduced-current transient spectroscopy (PICTS). A series of deep levels with a thermal activation energy ranging from 0.066-0.54 eV is revealed. It is found that the signal ratio in the set of spectra disagrees with the basic PICTS model. A procedure for evaluation of the concentration of deep levels is developed for these conditions. (c) 2005 Pleiades Publishing, Inc.
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页码：629 / 635
页数：7
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