Growth of thick 4H-SiC(0001) epilayers and reduction of basal plane dislocations

被引：26

作者：

Tsuchida, H

Kamata, I

Miyanagi, T

Nakamura, T

Nakayama, K

Ishii, R

Sugawara, Y

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[2] Kansai Elect Power Co Inc, Amagasaki, Hyogo 6610974, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 24-27期

关键词：

4H-SiC; epitaxial growth; basal plane dislocation; stacking fault;

D O I：

10.1143/JJAP.44.L806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate basal plane dislocations (BPDs) in thick 4H-SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes. Synchrotron reflection X-ray topography shows that epitaxial growth on (0001) is advantageous in preventing the propagation of BPDs from the substrate into the epilayer and obtaining a low BPD density in the epilayer compared with growth on (0001). The current stress test of 4H-SiC(0001) pin diodes demonstrates the suppressed formation of stacking faults.

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收藏

页码：L806 / L808

页数：3

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