Introduction of a dc bias into a high-Q superconducting microwave cavity

被引：37

作者：

Chen, Fei ^{[1
]}

Sirois, A. J. ^{[2
]}

Simmonds, R. W. ^{[3
]}

Rimberg, A. J. ^{[1
]}

机构：

[1] Dartmouth Coll, Dept Phys & Astron, Hanover, NH 03755 USA

[2] Univ Colorado, Boulder, CO 80309 USA

[3] Natl Inst Stand & Technol, Boulder, CO 80305 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 13期

基金：

美国国家科学基金会;

关键词：

QUANTUM; QUBITS; STATE;

D O I：

10.1063/1.3573824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573824]

引用

页数：3

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