Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

被引：24

作者：

Krajewski, Tomasz A. ^{[1
]}

Luka, Grzegorz ^{[1
]}

Gieraltowska, Sylwia ^{[1
]}

Zakrzewski, Adam J. ^{[1
,2
]}

Smertenko, Petro S. ^{[3
]}

Kruszewski, Piotr ^{[1
,4
,5
]}

Wachnicki, Lukasz ^{[1
]}

Witkowski, Bartlomiej S. ^{[1
]}

Lusakowska, Elzbieta ^{[1
]}

Jakiela, Rafal ^{[1
]}

Godlewski, Marek ^{[1
,2
]}

Guziewicz, Elzbieta ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, PL-01815 Warsaw, Poland

[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[4] CNRS, IM2NP, UMR, F-13397 Marseille, France

[5] Univ Paul Cezanne, F-13397 Marseille, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期

关键词：

CONTACTS; DIODES; PLASMA; AG;

D O I：

10.1063/1.3604796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports on ZnO/Ag Schottky junctions obtained by the low temperature atomic layer deposition process. Introducing the thin (from 1.25 to 7.5 nm) layer of hafnium dioxide between the ZnO layer and evaporated Ag Schottky contact improves the rectification ratio to about 10(5) at 2V. For the ZnO/ Ag junctions without the HfO2 interlayer, the rectification ratio is only 10(2). We assign this effect to the passivation of ZnO surface accumulation layer that is reported for ZnO thin films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3604796]

引用

页数：3

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