PE-TEOS Wafer Bonding Enhancement at Low Temperature with a High-κ Dielectric Capping Layer of Al2O3

被引：11

作者：

Chong, G. Y. ^{[1
]}

Tan, C. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 02期

关键词：

THIN-FILM; INTEGRATION; SYSTEMS;

D O I：

10.1149/1.3507291

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The bond strength of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) oxide wafers, bonded and annealed at low temperatures (300 degrees C and below), is enhanced by using a thin layer of high-kappa dielectric at the bonding interface. Prior to bonding, a thin (similar to 5 nm) capping layer of Al2O3 high-kappa dielectric was deposited using atomic layer deposition on polished PE-TEOS wafers, followed by surface activation. It was found that after a 300 degrees C anneal in N-2 ambient for 3 h, the bond strength of a wafer pair bonded with Al2O3/PE-TEOS oxide was enhanced by 73.3%. The bonding interface is stable and seamless with no presence of a microvoid. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3507291] All rights reserved.

引用

页码：H137 / H141

页数：5

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