Dynamic phase transformation of crystalline silicon under the dry and wet impact studied by molecular dynamics simulation

被引:15
作者
Chen, Ruling [1 ]
Luo, Jianbin [2 ]
Guo, Dan [2 ]
Lei, Hong [1 ]
机构
[1] Shanghai Univ, Nanosci & Technol Res Ctr, Shanghai 200444, Peoples R China
[2] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
关键词
NANO-INDENTATION; CLUSTER-IMPACT; NANOINDENTATION; MONOCRYSTALS; SURFACE; WATER; DEFORMATION; SI;
D O I
10.1063/1.3490757
中图分类号
O59 [应用物理学];
学科分类号
摘要
Molecular dynamics simulation is applied in analyzing quantitatively the dynamic phase transformation of crystalline silicon under the dry and wet impact, respectively. At the impact loading stage, the phase transformation between fourfold silicon atoms and fivefold or threefold silicon atoms is affected only by the local pressure. The influence of the local temperature or the contact area on the phase transformation will emerge from the impact unloading stage. And the dynamic process of phase transformation between fourfold atoms and fivefold or threefold atoms will obey the Boltzmann distribution law by stages. The variance of the number of fivefold or fourfold atoms at impact loading stage is almost the same as the impact unloading stage. Furthermore, the dynamic residence time of fivefold or threefold atoms formed during the impact process will be about 250 fs. The half-life of these atoms is about 50 fs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490757]
引用
收藏
页数:6
相关论文
共 29 条
[1]  
Allen M. P., 2017, COMPUTER SIMULATION
[2]   Molecular dynamics simulations of sequential cluster ion impacts [J].
Aoki, T ;
Matsuo, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 228 :46-50
[3]   In situ electrical characterization of phase transformations in Si during indentation -: art. no. 085205 [J].
Bradby, JE ;
Williams, JS ;
Swain, MV .
PHYSICAL REVIEW B, 2003, 67 (08)
[4]   Phase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation [J].
Chen, Ruling ;
Luo, Jianbin ;
Guo, Dan ;
Lu, Xinchun .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (14) :3231-3240
[5]   Extrusion formation mechanism on silicon surface under the silica cluster impact studied by molecular dynamics simulation [J].
Chen, Ruling ;
Luo, Jianbin ;
Guo, Dan ;
Lu, Xinchun .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[6]   Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation [J].
Cheong, WCD ;
Zhang, LC .
NANOTECHNOLOGY, 2000, 11 (03) :173-180
[7]   AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].
CLARKE, DR ;
KROLL, MC ;
KIRCHNER, PD ;
COOK, RF ;
HOCKEY, BJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159
[8]   DYNAMICS OF CLUSTER-SURFACE COLLISIONS [J].
CLEVELAND, CL ;
LANDMAN, U .
SCIENCE, 1992, 257 (5068) :355-361
[9]   Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon [J].
Domnich, V ;
Gogotsi, Y ;
Dub, S .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2214-2216
[10]   Atomistic structural change of silicon surface under a nanoparticle collision [J].
Duan, FL ;
Luo, JB ;
Wen, SZ ;
Wang, JX .
CHINESE SCIENCE BULLETIN, 2005, 50 (15) :1661-1665