Potential fluctuations in phase change memory materials

被引：6

作者：

Bapanayya, Ch ^{[1
]}

Gupta, Rajeev ^{[1
]}

Agarwal, S. C. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Mat Sci Programme, Kanpur 208016, Uttar Pradesh, India

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2011年 / 91卷 / 02期

关键词：

chalcogenide glasses; crystallisation; electronic transport; phase changes; BOND CONSTRAINT THEORY; ELECTRONIC TRANSPORT; STATES; METASTABILITIES; MECHANISM; MODEL; GAP;

D O I：

10.1080/09500839.2010.541396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Long-range potential fluctuations have been quantified in amorphous and crystallised thin films of a family of Ge-Sb-Te (GST) chalcogenide glasses. Among the compositions studied, the width of the potential fluctuations is the smallest for amorphous Ge2Sb2Te5. This is also the most robust material in terms of the number of write-erase cycles for GST films when used as phase change memory materials. A plausible explanation for this observation is given and a criterion for selecting suitable compositions in optical memory devices is proposed.

引用

页码：134 / 139

页数：6

共 21 条

[1] Electronic transport and metastabilities in P-doped a-Si:H
Agarwal, P
Agarwal, SC
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) : 3214 - 3219
[2] Bond constraint theory and the quest for the glass computer
Agarwal, S. C.
Paesler, M. A.
Baker, D. A.
Taylor, P. C.
Lucovsky, G.
Edwards, A.
[J]. PRAMANA-JOURNAL OF PHYSICS, 2008, 70 (02): : 245 - 254
[3] Potential fluctuations and metastabilities in hydrogenated amorphous silicon
Agarwal, SC
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 703 - 706
[4] Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5
Baker, DA
Paesler, MA
Lucovsky, G
Agarwal, SC
Taylor, PC
[J]. PHYSICAL REVIEW LETTERS, 2006, 96 (25)
[5] Atomistic origins of the phase transition mechanism in Ge2Sb2Te5
Da Silva, Juarez L. F.
Walsh, Aron
Wei, Su-Huai
Lee, Hosun
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
[6] Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9
[7] Simple flash evaporator for making thin films of compounds
Hemanadhan, M.
Bapanayya, Ch.
Agarwal, S. C.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04): : 625 - 626
[8] Local order in amorphous Ge2Sb2Te5 and GeSb2Te4
Jovari, P.
Kaban, I.
Steiner, J.
Beuneu, B.
Schoeps, A.
Webb, M. A.
[J]. PHYSICAL REVIEW B, 2008, 77 (03)
[9] BONDING BANDS, LONE-PAIR BANDS, AND IMPURITY STATES IN CHALCOGENIDE SEMICONDUCTORS
KASTNER, M
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (06) : 355 - &
[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

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