Regain Strain-Hardening in High-Strength Metals by Nanofiller Incorporation at Grain Boundaries

被引:101
作者
Li, Zan [1 ]
Wang, Haotian [2 ]
Guo, Qiang [1 ]
Li, Zhicliang [1 ]
Xiong, Ding-Bang [1 ]
Su, Yishi [1 ]
Gao, Huajian [3 ]
Li, Xiaoyan [2 ]
Zhang, Di [1 ]
机构
[1] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
[2] Tsinghua Univ, Dept Engn Mech, Appl Mech Lab, Ctr Adv Mech & Mat, Beijing 100084, Peoples R China
[3] Brown Univ, Sch Engn, Providence, RI 02912 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Nanostructured metals; mechanical property; grain-boundary engineering; metal matrix composites; graphene; MECHANICAL-PROPERTIES; NANOCRYSTALLINE METALS; RATE SENSITIVITY; NANOLAMINATED STRUCTURE; NANOSTRUCTURED METAL; PLASTIC-DEFORMATION; ACTIVATION VOLUME; TWIN BOUNDARIES; COPPER; DUCTILITY;
D O I
10.1021/acs.nanolett.8b02375
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Grain refinement to the nano/ultrafine-grained regime can make metals several times stronger, but this process is usually accompanied by a dramatic loss of ductility. Such strength-ductility trade-off originates from a lack of strain-hardening capacity in tiny grains. Here, we present a strategy to regain the strain-hardening ability of high-strength metals by incorporation of extrinsic nanofillers at grain boundaries. We demonstrate that the dislocation storage ability in Cu grains can be considerably improved through this novel grain-boundary engineering approach, leading to a remarkably enhanced strain-hardening capacity and tensile ductility (uniform elongation). Experiments and large-scale atomistic simulations reveal that a key benefit of incorporated nanofillers is a reduction in the grain-boundary energy, enabling concurrent dislocation storage near the boundaries and in the Cu grain interior during straining. The strategy of grain-boundary engineering through nanofillers is easily controllable, generally applicable, and may open new avenues for producing nanostructured metals with extraordinary mechanical properties.
引用
收藏
页码:6255 / 6264
页数:10
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