Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

被引：4

作者：

Li Da-Bing ^{[1
,2
]}

Hu Wei-Guo ^{[2
]}

Hideto, Miyake ^{[2
]}

Kazumasa, Hiramatsu ^{[2
]}

Song Hang ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 12期

基金：

中国国家自然科学基金;

关键词：

nitride; quantum wells; optical properties; luminescence; QUANTUM-WELLS; HETEROJUNCTIONS; SEMICONDUCTORS; ALN;

D O I：

10.1088/1674-1056/19/12/127801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

引用

页数：5

共 18 条

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