A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

被引：40
作者：
Tiwari, Pramod Kumar [1 ]
Dubey, Sarvesh [1 ]
Singh, Manjeet [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Dept Elect Engn, Ctr Res Microelect CRME, Inst Technol, Varanasi 221005, Uttar Pradesh, India
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期
关键词：
SOI MOSFET; SIMULATION; SCES;
D O I：
10.1063/1.3488605
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A two-dimensional (2D) analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented in this paper. The 2D Poisson's equation has been solved with suitable boundary conditions by applying the parabolic potential approximation. The lightly doped channel has been taken to enhance the device performance in terms of higher carrier mobility and minimum dopant fluctuation. The improved hot carrier effects over the double-material DG MOSFETs have been demonstrated. Different length ratios of three channel regions related to different gate materials have been optimized to minimize short-channel effects. The effects of device parameters on the threshold voltage have also been discussed. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS (TM). (C) 2010 American Institute of Physics. [doi:10.1063/1.3488605]
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页数：8
相关论文
共 24 条
[1]   Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs [J].
Abd El Hamid, Hamdy ;
Guitart, Jaume Roig ;
Iniguez, Benjamin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (06) :1402-1408
[2]   A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs [J].
Chen, Q ;
Agrawal, B ;
Meindl, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) :1086-1090
[3]   A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs [J].
Chen, QA ;
Harrell, EM ;
Meindl, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1631-1637
[4]   A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's [J].
Chiang, Te-Kuang .
MICROELECTRONICS RELIABILITY, 2009, 49 (02) :113-119
[5]  
Dao-Ming K, 2006, 8 INT C SOL STAT INT
[6]   Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects [J].
Diagne, Birahim ;
Pregaldiny, Fabien ;
Lallement, Christophe ;
Sallese, Jean-Michel ;
Krummenacher, Francois .
SOLID-STATE ELECTRONICS, 2008, 52 (01) :99-106
[7]   Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors [J].
Elhamid, Hamdy Abd ;
Deen, M. J. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (11)
[8]   MODELING OF ULTRATHIN DOUBLE-GATE NMOS/SOI TRANSISTORS [J].
FRANCIS, P ;
TERAO, A ;
FLANDRE, D ;
VANDEWIELE, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) :715-720
[9]   Quantum-based simulation analysis of scaling in ultrathin body device structures [J].
Kumar, A ;
Kedzierski, J ;
Laux, SE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (04) :614-617
[10]   New dual-material SG nanoscale MOSFET: Analytical threshold-voltage model [J].
Kumar, MJ ;
Orouji, AA ;
Dhakad, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) :920-923
123